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STP16N65M5 Datasheet(PDF) 8 Page - STMicroelectronics |
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STP16N65M5 Datasheet(HTML) 8 Page - STMicroelectronics |
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8 / 19 page ![]() Electrical characteristics STB16N65M5, STD16N65M5 8/19 Doc ID 18146 Rev 2 Figure 14. Normalized gate threshold voltage vs. temperature Figure 15. Source-drain diode forward characteristics Figure 16. Switching losses vs. gate resistance(1) 1. Eon including reverse recovery of a SiC diode. VGS(th) 1.00 0.90 0.80 0.70 -50 0 TJ(°C) (norm) 1.10 50 100 ID=250µA AM03184v1 VSD 0 5 ISD(A) (V) 10 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TJ=25°C TJ=150°C TJ=-25°C AM03186v1 E 60 40 20 0 0 20 RG( Ω) ( µJ) 10 30 80 100 40 Eon Eoff AM10359v1 |
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