STB16N65M5 datasheet(5/19 Pages) STMICROELECTRONICS

Part #	STB16N65M5

Description	N-channel 650 V, 0.230 Ohm, 12 A MDmesh V Power MOSFET in DPAK, DPAK

PDF	19 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 19 page

STB16N65M5, STD16N65M5

Electrical characteristics

Doc ID 18146 Rev 2

5/19

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td (v)

tr (v)

tf (i)

tc(off)

Voltage delay time

Voltage rise time

Current fall time

Crossing time

VDD = 400 V, ID = 8 A,

RG = 4.7 Ω, VGS = 10 V

(see

Figure 19)

(see

Figure 22)

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 12 A, VGS = 0

1.5

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 12 A, di/dt = 100 A/µs

VDD = 100 V (see Figure 22)

300

3.5

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 12 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see

Figure 22)

350

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