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March 2002

.

STD10PF06

P-CHANNEL 60V - 0.18

Ω - 10A IPAK/DPAK

STripFET™ II POWER MOSFET

s

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

LOW GATE CHARGE

s

APPLICATION ORIENTED

CHARACTERIZATION

s

THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX “-1")

s

SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX “T4")

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™" strip-

based process. The resulting transistor shows extremely

high packing density for low on-resistance, rugged

avalanche characteristics and less critical alignment

steps

therefore

a

remarkable

manufacturing

reproducibility.

APPLICATIONS

s

MOTOR CONTROL

s

DC-DC & DC-AC CONVERTERS

TYPE

STD10PF06

60 V

< 0.20

Ω

10 A

3

2

1

1

3

IPAK

TO-251

(Suffix “-1”)

DPAK

TO-252

(Suffix “T4”)

ABSOLUTE MAXIMUM RATINGS

Note: P-CHANNEL MOSFET actual polarity of voltages and current

has to be reversed

Symbol

Parameter

Value

Unit

60

V

60

V

Gate- source Voltage

± 20

V

10

A

7A

Drain Current (pulsed)

40

A

40

W

Derating Factor

0.27

W/°C

Peak Diode Recovery voltage slope

6

V/ns

Storage Temperature

-65 to 175

°C

Max. Operating Junction Temperature

175

°C

INTERNAL SCHEMATIC DIAGRAM