DMN4800LSSL datasheet(1/6 Pages) DIODES

Part #	DMN4800LSSL

Description	N-CHANNEL ENHANCEMENT MODE MOSFET

PDF	6 Pages

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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1 / 6 page

DMN4800LSSL

Document number: DS35016 Rev. 3 - 2

1 of 6

www.diodes.com

October 2011

DMN4800LSSL

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V(BR)DSS

RDS(on)

ID max

TA = 25°C

30V

14m

Ω @ VGS = 10V

8.0A

20m

Ω @ VGS = 4.5V

6.7A

Description and Applications

This new generation MOSFET has been designed to minimize the on-

state resistance (RDS(on)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

•

DC-DC Converters

•

Power management functions

Features and Benefits

•

14m

Ω @ VGS = 10V

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Lead Free By Design/RoHS Compliant (Note 1)

•

"Green" Device (Note 2)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SO-8

•

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminals Connections: See Diagram

•

Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

•

Weight: 0.072 grams (approximate)

Ordering Information (Note 3)

Part Number

Case

Packaging

DMN4800LSSL-13

SO-8

2500/Tape & Reel

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Top View

Internal Schematic

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D

G

D

S

Top View

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Part no.

Year: “09” = 2009

Week: 01 ~ 53

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8

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N4800LS

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SO-8

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