USBULC1606-4M8 datasheet(2/15 Pages) STMICROELECTRONICS

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Characteristics

USBULC1606-4M8

2/15

Doc ID 16864 Rev 1

Characteristics

Table 1.

Absolute maximum ratings Tamb = 25 °C

Symbol

Parameter

Value

Unit

VPP

ESD discharge IEC 61000-4-2, level 4

Contact discharge HV diode

Contact discharge LV diodes

Air discharge all pins

VLVMAX DC Voltage on low-voltage pins

6.0

VHVMAX DC Voltage on high-voltage pin (Vcc pin)

14.5

Ipp

Peak pulse current (8/20 µs) on high voltage pin (Vcc pin)

2.5

Ppp

Peak pulse power dissipation (8/20 µs) on high voltage pin (Vcc pin)

(1)

Tj initial = Tamb

Junction temperature

125

°C

Top

Operating temperature range

-30 to + 85

°C

Tstg

Storage temperature range

-55 to +150

°C

For a surge greater than the maximum values, the diode will fail in short-circuit

Table 2.

Electrical characteristics Tamb = 25 °C, otherwise specified

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VF1 +

LV Diode Reverse Voltage –

Positive Voltage

IF = 10 mA

6.8

9.2

VF1 -

LV Diode Forward Voltage –

Negative Voltage

IF = 10 mA

-1.05

-0.6

IRM1

Low Voltage diode leakage current

VIN = 3.3 V, VN = 0 V

Ta = -30 to + 65 °C

0.1

µA

Rd1

Dynamic Resistance of LV Diode

IPP = 1 A, tp = 8/20 µs

1.5

Low Voltage diode input

capacitance

VIN = 0 V,

Vosc = 30 mV

F = 1 MHz

Any I/O pin to VN

0.95

1.1

VIN = 200 mV,

Vosc = 200 mV

F = 240 MHz

Any I/O pin to VN

0.5

0.55

VCL1

Low Voltage diode clamping

voltage

IPP = 1 A, tp = 8/20 µs

Positive Transient

Negative transient

-2.4

VCL2

High Voltage diode clamping

voltage

IPP = 1 A, tp = 8/20 µs

IPP = 2.5 A, tp = 8/20 µs

VF2 +

HV Diode Reverse Voltage –

Positive Voltage

IF = 10 mA

14.6

17.7

Obsolete

Product(s)

- Obsolete

Product(s)

USBULC1606-4M8 Datasheet(PDF) 2 Page - STMicroelectronics

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