STN3N45K3 datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STN3N45K3, STQ3N45K3-AP, STU3N45K3

4/12

Doc ID 17206 Rev 2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

450

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125 °C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

± 10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 50 µA

3.75

4.5

RDS(on

Static drain-source on

resistance

VGS = 10 V, ID = 0.5 A

3.2

3.8

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz, VGS = 0

150

Intrinsic gate

resistance

f = 1 MHz open drain

TBD

Ω

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 360 V, ID = 1.8 A,

VGS = 10 V

(see

Figure 3)

TBD

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

VDD = 225 V, ID = 0.5 A,

RG = 4.7 Ω, VGS = 10 V

(see

Figure 2)

TBD

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