MRF1002MA MRF1002MB

2

MOTOROLA RF DEVICE DATA

Characteristic

Symbol

Min

Typ

Max

Unit

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 35 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

2.5

5.0

pF

µs, Duty Cycle = 1.0%)

Common–Base Amplifier Power Gain

(VCC = 35 Vdc, Pout = 2.0 W pk, f = 1090 MHz)

GPB

10

12

—

dB

Collector Efficiency

(VCC = 35 Vdc, Pout = 2.0 W pk, f = 1090 MHz)

η

40

45

—

dB

Load Mismatch

(VCC = 35 Vdc, Pout = 2.0 W, f = 1090 MHz,

VSWR = 10:1 All Phase Angles)

ψ

No Degradation in Power Output

Figure 1. 1090 MHz Test Circuit

C1, C3 — 220 pF Chip Capacitor, 100 mil ATC

C2 — 20

µF/50 Vdc Electrolytic

C4 — 0.1

µF Erie Redcap

L1, L2 — 2 Turns #18 AWG, 1/8

″ ID

Z1–Z14 — Distributed Microstrip Elements, See Photomaster

Board Material — 0.031

″ Thick Teflon–Fiberglass,

Board Material —

εr = 2.56

RF

INPUT

RF

OUTPUT

C1

Z13

C2

C3

C4

+

35 Vdc

–

+

L1

DUT

Z1

Z2

Z5

Z4

Z7

Z3

Z6

Z8

Z11

Z14

Z9

Z12

Z10