LM25101AMSLASHNOPB datasheet(13/25 Pages) TI

13 / 25 page

100

1000

SWITCHING FREQUENCY (kHz)

0.001

0.010

0.100

CL = 4400 pF

CL = 0 pF

LM25101A, LM25101B, LM25101C

www.ti.com

SNVS859B – JULY 2012 – REVISED APRIL 2013

The bootstrap diode power loss is the sum of the forward bias power loss that occurs while charging the

bootstrap capacitor and the reverse bias power loss that occurs during reverse recovery. Since each of these

events happens once per cycle, the diode power loss is proportional to frequency. Larger capacitive loads

require more energy to recharge the bootstrap capacitor resulting in more losses. Higher input voltages (VIN) to

the half bridge result in higher reverse recovery losses. Figure 23 was generated based on calculations and lab

measurements of the diode recovery time and current under several operating conditions. This can be useful for

approximating the diode power dissipation.

The total IC power dissipation can be estimated from the previous plots by summing the gate drive losses with

the bootstrap diode losses for the intended application.

Figure 23. Diode Power Dissipation VIN = 50V

Submit Documentation Feedback

Product Folder Links: LM25101A LM25101B LM25101C

LM25101AM/NOPB Datasheet(PDF) 13 Page - Texas Instruments