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4

Document Number 83032

Rev. 1.8, 12-Sep-07

Vishay Semiconductors

TLMG/H/O/P/Y310.

TYPICAL CHARACTERISTICS

Figure 1. Power Dissipation vs. Ambient Temperature

Figure 2. Forward Current vs. Ambient Temperature for InGaN

Figure 3. Pulse Forward Current vs. Pulse Duration

100

80

60

40

0

25

50

75

100

125

95 10904

20

0

0

10

20

30

40

60

95 10905

50

T

100

80

60

40

20

0

0.01

0.1

1

10

1

10

100

1000

10000

100

95 9985

DC

0.5

0.2

0.1

0.01

0.05

0.02

T

Figure 4. Rel. Luminous Intensity vs. Angular Displacement

Figure 5. Forward Current vs. Forward Voltage

Figure 6. Rel. Luminous Intensity vs. Ambient Temperature

0.4

0.2

0

0.2

0.4

0.6

95 10319

0.6

0.9

0.8

0°

30°

10°

20°

40°

50°

60°

70°

80°

0.7

1.0

0.1

1

10

100

5

4

3

2

95 9989

red

1

0

0

0.4

0.8

1.2

1.6

2.0

100

95 9993

0

204060

80

red