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TIP2955 Datasheet(PDF) 3 Page - ON Semiconductor

Part # TIP2955
Description  Complementary Silicon Power Transistors
PDF  6 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

TIP2955 Datasheet(HTML) 3 Page - ON Semiconductor

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TIP3055 (NPN), TIP2955 (PNP)
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
60
−
Vdc
Collector Cutoff Current
(VCE = 70 Vdc, RBE = 100 Ohms)
ICER
−
1.0
mAdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
ICEO
−
0.7
mAdc
Collector Cutoff Current
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
ICEV
−
5.0
mAdc
Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
−
5.0
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
20
5.0
70
−
−
Collector−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
−
−
1.1
3.0
Vdc
Base−Emitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
−
1.8
Vdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 30 Vdc, t = 1.0 s; Nonrepetitive)
Is/b
3.0
−
Adc
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
2.5
−
MHz
Small−Signal Current Gain
(VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)
hfe
15
−
kHz
NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.



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