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950211BFLF Datasheet(PDF) 1 Page - Microchip Technology |
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950211BFLF Datasheet(HTML) 1 Page - Microchip Technology |
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1 / 22 page  2010 Microchip Technology Inc. DS21131F-page 1 93LC76/86 Features: • Single Supply with Programming Operation down to 2.5V • Low-Power CMOS Technology - 1 mA active current typical -5 A standby current (typical) at 3.0V • ORG Pin Selectable Memory Configuration 1024 x 8 or 512 x 16-Bit Organization (93LC76) 2048 x 8 or 1024 x 16-Bit Organization (93LC86) • Self-Timed Erase and Write Cycles (including auto-erase) • Automatic ERAL before WRAL • Power On/Off Data Protection Circuitry • Industry Standard 3-Wire Serial I/O • Device Status Signal during Erase/Write Cycles • Sequential Read Function • 1,000,000 Erase/Write Cycles Ensured • Data Retention > 200 years • 8-Pin PDIP/SOIC Package • Temperature Ranges Available Description: The Microchip Technology Inc. 93LC76/86 are 8K and 16K low voltage serial Electrically Erasable PROMs. The device memory is configured as x8 or x16 bits depending on the ORG pin setup. Advanced CMOS technology makes these devices ideal for low power nonvolatile memory applications. These devices also have a Program Enable (PE) pin to allow the user to write-protect the entire contents of the memory array. The 93LC76/86 is available in standard 8-pin PDIP and 8-pin surface mount SOIC packages. Package Types Block Diagram - Commercial (C) 0°C to +70°C - Industrial (I) -40°C to +85°C SOIC Package PDIP Package CS CLK DI DO VSS PE VCC ORG CS CLK DI DO VCC PE ORG VSS 1 2 3 4 8 7 6 5 1 2 3 4 8 7 6 5 DO CS CLK VCC VSS Memory Array Address Decoder Data Register Counter Address Output Buffer Mode Decode Logic Generator Clock DI PE 8K/16K 2.5V Microwire Serial EEPROM Not recommended for new designs – Please use 93LC76C or 93LC86C. |
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