STM8S003K3 datasheet(66/100 Pages) STMICROELECTRONICS

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(1) Data based on characterization results, not tested in production.

(2) The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes

even when a write/erase operation addresses a single byte.

I/O port pin characteristics

9.3.6

General characteristics

Subject to general operating conditions for VDD and TA unless otherwise specified. All unused

pins must be kept at a fixed voltage: using the output mode of the I/O for example or an

external pull-up or pull-down resistor.

Table 37: I/O static characteristics

Unit

Max

Typ

Min

Conditions

Parameter

Symbol

0.3 x

VDD

-0.3 V

VDD = 5 V

Input low level voltage

VIL

VDD +

0.3

0.7 x

VDD

Input high level voltage

VIH

700

Hysteresis

(1)

Vhys

kΩ

VDD = 5 V, VIN = VSS

Pull-up resistor

Rpu

(2)

Fast I/Os

Load = 50 pF

Rise and fall time

(10 % - 90 %)

tR, tF

125

(2)

Standard and high sink

I/Os

Load = 50 pF

μA

±1

(2)

VSS ≤ VIN ≤VDD

Digital input leakage current

Ilkg

±250

(2)

VSS ≤ VIN ≤ VDD

Analog input leakage current

Ilkg ana

μA

±1

(2)

Injection current ±4 mA

Leakage current in adjacent

I/O

Ilkg(inj)

(1) Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not

tested in production.

(2)Data based on characterisation results, not tested in production.

DocID018576 Rev 3

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STM8S003K3 STM8S003F3

Electrical characteristics

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