DMN3052L

Document number: DS31406 Rev. 4 - 2

3 of 6

www.diodes.com

July 2009

© Diodes Incorporated

DMN3052L

04

8

12

16

20

I , DRAIN-SOURCE CURRENT (A)

D

Fig 3 On-Resistance vs. Drain Current & Gate Voltage

0.01

0.1

1

V

= 10V

GS

V

= 4.5V

GS

V

= 2.5V

GS

0

0.02

0.04

0.06

0.08

04

8

12

16

20

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 4 On-Resistance vs. Drain Current & Temperature

V

= 4.5V

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

Fig. 5 Static Drain-Source On-Resistance

vs. Ambient Temperature

0.6

0.8

1.0

1.2

1.4

1.6

V

= 10V

I = 10A

GS

D

V

= 4.5V

I = 5A

GS

D

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

-50

-25

0

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (°C)

A

Fig. 6 Gate Threshold Variation vs. Ambient Temperature

I = 250µA

D

I = 1mA

D

0

0.2

0.4

0.6

0.8

1

1.2

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 7 Reverse Drain Current vs. Source-Drain Voltage

0

4

8

12

16

20

T = 25°C

A

0

5

10

15

20

25

Fig. 8 Typical Total Capacitance

V

, DRAIN-SOURCE VOLTAGE (V)

DS

10

100

1,000

f = 1MHz