©2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FOD814 Series, FOD817 Series Rev. 1.1.5

2

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Symbol

Parameter

Value

Units

FOD814

FOD817

TOTAL DEVICE

Storage Temperature

-55 to +150

°C

Operating Temperature

-55 to +105

-55 to +110

°C

Lead Solder Temperature

260 for 10 sec

°C

Junction Temperature

125 Max.

°C

Junction-to-Case Thermal Resistance

210

°C/W

Total Power Dissipation

200

mW

EMITTER

Continuous Forward Current

±50

50

mA

Reverse Voltage

6

Power Dissipation

Derate above 100°C

70

1.7

mW

mW/°C

DETECTOR

Collector-Emitter Voltage

70

V

Emitter-Collector Voltage

6

V

Continuous Collector Current

50

mA

Collector Power Dissipation

Derate above 90°C

150

2.9

mW

mW/°C