STB4N62K3, STD4N62K3

Electrical characteristics

Doc ID 18337 Rev 2

5/18

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

(1)

1.

Pulse width limited by safe operating area.

Source-drain current

Source-drain current (pulsed)

-

3.8

15.2

A

A

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

-

1.6

V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

-

220

1.4

13

ns

µC

A

Reverse recovery time

Reverse recovery charge

Reverse recovery current

(see Figure 22)

-

270

1.9

14

ns

µC

A

Table 8.

Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Gate-source breakdown

voltage

Igs=± 1 mA (open drain)

30

-

V