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IRGP4640DPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRGP4640DPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 12 page  IRGP4640DPbF/IRGP4640D-EPbF www.irf.com © 2012 International Rectifier January 8, 2013 2 Notes: VCC = 80% (VCES), VGE = 20V, L = 100μH, RG = 10 Refer to AN-1086 for guidelines for measuring V (BR)CES safely. Pulse width limited by max. junction temperature. Ris measured at T J of approximately 90°C. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter BreakdownVoltage 600 — — V VGE = 0V, IC = 100μA d V(BR)CES/T J T emperatureCoeff.of BreakdownVoltage —0.30— V/°C VGE = 0V, IC = 1mA (25°C-175°C) — 1.60 1.90 IC = 24A, VGE = 15V, TJ = 25°C VCE(on) Collector-to-Emitter Saturation Voltage — 1.90 — V IC = 24A, VGE = 15V, TJ = 150°C —2.00— IC = 24A, VGE = 15V, TJ = 175°C VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 700μA VGE(th)/TJ Threshold Voltage temp. coefficient — -18 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) gfe Forward Transconductance — 17 — S VCE = 50V, IC = 24A, PW = 80μs ICES Collector-to-Emitter Leakage Current — 2.0 25 μAVGE = 0V, VCE = 600V —775 — VGE = 0V, VCE = 600V, TJ = 175°C VFM Diode Forward Voltage Drop — 1.80 2.6 V IF = 24A —1.28— IF = 24A, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge (turn-on) — 50 75 IC = 24A Qge Gate-to-Emitter Charge (turn-on) — 13 20 nC VGE = 15V Qgc Gate-to-Collector Charge (turn-on) — 21 31 VCC = 400V Eon Turn-On Switching Loss — 115 201 IC = 24A, VCC = 400V, VGE = 15V Eoff Turn-Off Switching Loss — 600 700 μJRG = 10 , L = 200μH, LS = 150nH, TJ = 25°C Etotal Total Switching Loss — 715 901 Energy los s es include tail &diode revers e recovery td(on) Turn-On delay time — 41 53 IC = 24A, VCC = 400V, VGE = 15V tr Rise time — 22 31 ns RG = 10 , L = 200μH, LS = 150nH, TJ = 25°C td(off) Turn-Off delay time — 104 115 tf Fall time — 29 41 Eon Turn-On Switching Loss — 420 — IC = 24A, VCC = 400V, VGE=15V Eoff Turn-Off Switching Loss — 840 — μJRG=10 , L= 200μH, LS=150nH, TJ = 175°C Etotal Total Switching Loss — 1260 — Energy los s es include tail &diode revers e recovery td(on) Turn-On delay time — 40 — IC = 24A, VCC = 400V, VGE = 15V tr Rise time — 24 — ns RG = 10 , L = 200μH, LS = 150nH td(off) Turn-Off delay time — 125 — TJ = 175°C tf Fall time — 39 — Cies Input Capacitance — 1490 — pF VGE = 0V Coes Output Capacitance — 129 — VCC = 30V Cres Reverse Transfer Capacitance — 45 — f = 1.0Mhz TJ = 175°C, IC = 96A RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V Rg = 10 , VGE = +20V to 0V SCSOA Short Circuit Safe Operating Area 5 — — μsVCC = 400V, Vp =600V Rg = 10 , VGE = +15V to 0V Erec Reverse Recovery Energy of the Diode — 621 — μJTJ = 175°C trr Diode Reverse Recovery Time — 89 — ns VCC = 400V, IF = 24A Irr Peak Reverse Recovery Current — 37 — A VGE = 15V, Rg = 10 , L =200μH, Ls = 150nH Conditions |
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