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2N3906 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # 2N3906
Description  PNP SMALL SIGNAL TRANSISTOR
PDF  3 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

2N3906 Datasheet(HTML) 2 Page - Diodes Incorporated

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D
S11202 Rev. K-3
2 of 3
2N3906
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
DC Current Gain
hFE
50
70
100
60
30
¾
¾
300
¾
¾
¾
-VCE = 1.0V,- IC = 0.1mA
-VCE = 1.0V,- IC = 1.0mA
-VCE = 1.0V,- IC = 10mA
-VCE = 1.0V,- IC = 50mA
-VCE = 1.0V,- IC = 100mA
Collector Saturation Voltage
VCE(SAT)
¾
0.25
0.40
V
(Note 2)
-IC = 10mA,- IB = 1.0mA
-IC = 50mA,- IB = 5.0mA
Base Saturation Voltage
VBE(SAT)
¾
0.85
0.95
V
(Note 2)
-IC = 10mA, -IB = 1.0mA
-IC = 50mA, -IB = 5.0mA
Collector Cutoff Current
ICEX
¾
50
nA
-VEB = 3.0V, -VCE = 30V
Emitter Cutoff Current
IBL
¾
50
nA
-VEB = 3.0V, -VCE = 30V
Collector-Base Breakdown Voltage
V(BR)CBO
40
¾
V
-IC = 10
mA, -IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
¾
V
-IC = 1.0mA,- IB = 0 (Note 2)
Emitter-Base Breakdown Voltage
V(BR)EBO
5.0
¾
V
-IE = 10
mA,- IC = 0
Gain Bandwidth Product
fT
250
¾
MHz
-VCE = 20V, -IC = 10mA,
f = 100MHz
Collector-Base Capacitance
CCBO
¾
4.5
pF
-VCB = 5.0V, -IE = 0, f = 100kHz
Emitter-Base Capacitance
CEBO
¾
10
pF
-VEB = 0.5V, -IC = 0, f =100kHz
Noise Figure
NF
¾
5.0
dB
-VCE = 5.0V, -IC = 100
mA,
RG = 1.0k
W, f = 10 to 15000Hz
Delay Time
td
¾
35
ns
-IB1 = 1.0mA, -IC = 10mA,
VCC = 3.0V, VBE(off) = 0.5V
Rise Time
tr
¾
35
ns
-IB1 = 1.0mA,- IC = 10mA,
-VCC = 3.0V, -VBE(off) = 0.5V
Storage Time
ts
¾
225
ns
-IB1 =- IB2 = 1.0mA,
-IC = 10mA, -VCC = 3.0V
Fall Time
tf
¾
75
ns
-IB1 =- IB2 = 1.0mA,
-IC = 10mA, -VCC = 3.0V
Notes:
1. Leads maintained at a distance of 2.0mm from body at specified ambient temperature.
2. Pulse test: Pulse width
£ 300ms, duty cycle £ 2%.



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