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AS87C196CB20 Datasheet(PDF) 7 Page - Intel Corporation |
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AS87C196CB20 Datasheet(HTML) 7 Page - Intel Corporation |
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7 / 36 page ![]() Production Datasheet 3 87C196CB - Automotive 3.0 Process Information These devices are manufactured on P629.5, a CHMOS III-E process. Additional process and reliability information is available in Intel's Components Quality and Reliability Handbook, Order Number 210997. All thermal impedance data is approximate for static air conditions at 1 W of power dissipation. Values change depending on operation conditions and application. See the Intel Packaging Handbook (order number 240800) for a description of Intel's thermal impedance test methodology. Figure 2. The 87C196CB - Automotive Family Nomenclature A4610-01 AX 87 CC 20 B 19 6 Frequency Designation: 20 = 20 MHz No Mark = 16 MHz 7 = EPROM, OTP Product Designation Product Family CHMOS Technology Program Memory Options: N = PLCC (plastic leaded chip carrier) S = QFP (Quad Flatpack) Package Type Options: A = -40 ˚C to +125˚C ambient with Intel Standard Burn-in Temperature and Burn-in Options: x x x x x Table 2. Thermal Characteristics Device and Package ΘJA ΘJC xx87C196CB (84-Lead PLCC Package) 35°C/W 11°C/W NOTES: 1. ΘJA = Thermal resistance between junction and the surrounding environment (ambient) measurements are taken 1 ft. away from case in air flow environment. ΘJV = Thermal resistance between junction and package face (case). 2. All values of ΘJA and ΘJC may fluctuate depending on the environment (with or without airflow, and how much airflow) 3. and device power dissipation at temperature of operation. Typical variations are ± 2°C/W. 4. Values listed are at a maximum power dissipation of 1 W. 5. To address the fact that many of the package prefix variables have changed, all package prefix variables in this document are now indicated with an "x". |
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