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FS5ASH-06 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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FS5ASH-06 Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 4 page  Feb.1999 V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr MITSUBISHI Nch POWER MOSFET FS5ASH-06 HIGH-SPEED SWITCHING USE V µA mA V Ω Ω V S pF pF pF ns ns ns ns V °C/W ns 60 — — 0.6 — — — — — — — — — — — — — — — — — 0.9 0.11 0.13 0.22 10 540 120 40 12 20 50 32 1.0 — 45 — ±0.1 0.1 1.2 0.15 0.20 0.3 — — — — — — — — 1.5 6.25 — ELECTRICAL CHARACTERISTICS (Tch = 25 °C) Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol Unit Parameter Test conditions Limits Min. Typ. Max. ID = 1mA, VGS = 0V VGS = ±10V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 2A, VGS = 4V ID = 2A, VGS = 2.5V ID = 2A, VGS = 4V ID = 2A, VDS = 5V VDS = 10V, VGS = 0V, f = 1MHz VDD = 30V, ID = 2A, VGS = 4V, RGEN = RGS = 50 Ω IS = 2A, VGS = 0V Channel to case IS = 5A, dis/dt = –100A/ µs 0 8 16 24 32 40 0 200 50 100 150 0 4 8 12 16 20 0 1.0 2.0 3.0 4.0 5.0 PD = 20W Tc = 25°C Pulse Test VGS = 5V 4V 3V 2.5V 2V 1.5V 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0 Tc = 25°C Pulse Test VGS = 5V 4V 3V 2.5V 2V 1.5V POWER DISSIPATION DERATING CURVE CASE TEMPERATURE TC (°C) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE VDS (V) 2100 35 7 2 101 35 7 2 102 35 7 2 10–1 100 101 2 3 2 3 5 7 2 3 5 7 2 3 5 7 tw = 10 ms TC = 25°C Single Pulse 100 ms 10ms 1ms DC PERFORMANCE CURVES |
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