STD96N3LLH6 datasheet(1/15 Pages) STMICROELECTRONICS

Part #	STD96N3LLH6

Description	N-channel 30 V, 0.0037 Ω, 80 A, DPAK STripFET™ VI DeepGATE™ Power MOSFET

PDF	15 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 15 page

January 2011

Doc ID 18432 Rev 1

1/15

15

STD96N3LLH6

N-channel 30 V, 0.0037

Ω, 80 A, DPAK

STripFET™ VI DeepGATE™ Power MOSFET

Features

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ High avalanche ruggedness

■ Low gate drive power losses

Application

■ Switching applications

– Automotive

Description

This product is an N-channel Power MOSFET that

utilizes the 6th generation of design rules of ST’s

proprietary STripFET™ technology, with a new

gate structure. The resulting Power MOSFET

exhibits the lowest RDS(on) in all packages.

Figure 1.

Internal schematic diagram

Type

VDSS

RDS(on) max

ID

STD96N3LLH6

30 V

0.0042

Ω

80 A

DPAK

1

3

AM01474v1

D (TAB or 2)

G(1)

S(3)

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STD96N3LLH6

96N3LLH6

DPAK

Tape and reel

www.st.com

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