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CHR2292 Datasheet(PDF) 1 Page - United Monolithic Semiconductors |
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CHR2292 Datasheet(HTML) 1 Page - United Monolithic Semiconductors |
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1 / 6 page ![]() CHR2292 RoHS COMPLIANT Ref. DSCHR22921192 - 11 Jul 11 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 17-20GHz Integrated Down Converter GaAs Monolithic Microwave IC Description The CHR2292 is a multifunction chip which integrates a LO time two multiplier, a balanced cold FET mixer, and a RF LNA. It is designed for a wide range of applications, typically commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features Broadband performances : 17-20GHz 13dB conversion gain 4.0dB noise figure, for IF>0.1GHz 10dBm LO input power -10dBm RF input power (1dB gain comp.) Low DC power consumption, 110mA@3.5V Chip size : 2.49 X 2.13 X 0.10 mm -20 -16 -12 -8 -4 0 4 8 12 16 20 12 14 16 18 20 22 24 2*LO Frequency (GHz) Gc_channel_inf_rf- Gc_channel_sup_rf- Gc_channel_inf_rf+ Gc_channel_sup_rf+ Conversion Gain for F_IF=1GHz (on wafer meas.) P_LO=+10dBm / P_RF= -20dBm Main Characteristics Tamb. = 25°C Parameter Min Typ Max Unit FRF RF frequency range 17 20 GHz FLO LO frequency range 7.5 10 GHz FIF IF frequency range DC 1.5 GHz Gc Conversion gain 13 dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! LO Q I GM GB VDM VDL GX VGA RF |
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