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BUR52 Datasheet(PDF) 1 Page - Comset Semiconductor |
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BUR52 Datasheet(HTML) 1 Page - Comset Semiconductor |
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1 / 3 page ![]() BUR52 COMSET SEMICONDUCTORS 1/3 H HIIG GH H C CU UR RR RE EN NT T N NP PN N S SIIL LIIC CO ON N T TR RA AN NS SIIS ST TO OR RS S The BUR52 is a silicon multiepitaxial planar NPN transistor in modified jedec TO-3 metal case, Intented for use in switching and linear applications in military and industrial equipment. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage (IB = 0) 250 V VCBO Collector-Base Voltage (IE = 0) 350 V VEBO Emitter-Base Voltage (IC = 0) 10 V IC Collector Current IC 60 A ICM tp = (10 ms) 80 IB Base Current 16 A PT Power Dissipation @ TC = 25° 350 W TJ Junction Temperature 200 °C TS Storage Temperature -55 to +200 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 0.5 °C/W |
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