BUX12 datasheet(2/3 Pages) COMSET

2 / 3 page

NPN BUX12

26/10/2012

COMSET SEMICONDUCTORS

3/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO(SUS)

Collector-Emitter Sustaining Voltage

(*)

IC=200 mA

250

VEB0(SUS)

Emitter-Base Breakdown Voltage

(*)

IC=0A, IE=50 mA

ICEO

Collector Cutoff Current

VCE=200 V, IB=0A

1.5

ICEX

Collector Cutoff Current

VCE= VCEX, VBE= -1.5V

1.5

VCE= VCEX, VBE= -1.5V

Tcase = 125°C

IEBO

Emitter Cutoff Current

VEB=5.0 V, IC=0

hFE

DC Current Gain (*)

IC=5 A, VCE=4.0 V

IC=10 A, VCE=4.0 V

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC=5 A, IB=0.5 A

0.22

IC=10 A, IB=1.25 A

0.5

1.5

VBE(SAT)

Base-Emitter saturation Voltage (*)

IC=10 A, IB=1.25 A

1.23

1.5

IS/B

Second breakdown collector current

VCE=30 V, ts = 1s

VCE=140 , ts = 1s

0.15

ES/B

Clamped ES/B Collector current

Vclamp=250 V, L=500 µH

Transition frequency

VCE=15 V, IC=1 A

f=10 MHz

MHz

ton

Turn-on time

IC=10 A, IB=1.25 A

VCC=150 V

0.28

µs

Storage time

IC=10 A, VCC=150 V

IB1 = -IB2 =1.25 A

1.45

File time

0.23

0.5

(*) Pulse Duration = 300

µs, Duty Cycle <= 2%

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