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ISC6053AU1 Datasheet(PDF) 2 Page - Isahaya Electronics Corporation

Part # ISC6053AU1
Description  FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
PDF  4 Pages
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Manufacturer  ISAHAYA [Isahaya Electronics Corporation]
Direct Link  http://www.idc-com.co.jp
Logo ISAHAYA - Isahaya Electronics Corporation

ISC6053AU1 Datasheet(HTML) 2 Page - Isahaya Electronics Corporation

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PRELIMINARY
※This datasheet is possibility of change.
Because this device is developing now.
ISC6053AU1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
ISAHAYA ELECTRONICS CORPORATION
TYPICAL CHARACTERISTICS
10
100
1000
10000
1
10
100
1000
COLLECTOR CURRENT IC (mA)
DC FORWARD CURRENT GAIN VS.
COLLECTOR CURRENT
VCE=4V
85℃
25℃
-40℃
0
100
200
300
400
500
600
700
0
0.2
0.4
0.6
0.8
1
1.2
BASE TO EMITTER VOLTAGE VBE (V)
COMMON EMITTER TRANSFER(1)
VCE=4V
85℃
25℃
-40℃
0
2
4
6
8
10
00.2
0.4
0.6
0.811.2
BASE TO EMITTER VOLTAGE VBE (V)
COMMON EMITTER TRANSFER(2)
VCE=4V
85℃
25℃
-40℃
0
100
200
300
400
500
600
700
800
012
345
COLLECTOR TO EMITTER VOLTAGE VCE(V)
COMMON EMITTER OUTPUT(1)
IB=0mA
IB=1mA
IB=2mA
IB=3mA
IB=4mA
IB=5mA
IB=6mA
IB=7mA
IB=8mA
IB=9mA
IB=10mA
Ta=25℃
0
50
100
150
200
250
300
350
400
0
5
10
15
20
COLLECTOR TO EMITTER VOLTAGE VCE(V)
COMMON EMITTER OUTPUT(2)
IB=0mA
IB=0.1mA
IB=0.2mA
IB=0.3mA
IB=0.4mA
IB=0.5mA
IB=0.6mA
IB=0.7mA
IB=0.8mA
IB=1.0mA
IB=0.9mA
Ta=25℃
0
50
100
150
200
0
50
100
150
AMBIENT TEMPERATURE Ta(℃)
COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE



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