 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
RJM0407JSC Datasheet(PDF) 3 Page - Renesas Technology Corp |
|
|
|||||||||||||||||||||||||||||
RJM0407JSC Datasheet(HTML) 3 Page - Renesas Technology Corp |
|
|
3 / 12 page  RJM0407JSC Preliminary R07DS0368EJ0100 Rev.1.00 Page 3 of 11 Sep 20, 2012 Electrical Characteristics MOS1, MOS2, MOS3 (N Channel) (Ta = 25 C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage drain current IDSS — — 10 A VDS = 40 V, VGS = 0 Gate to source leak current IGSS — — 10 A VGS = 20 V, VDS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V VDS = 10 V, ID = 1 mA Static drain to source on state resistance RDS(on) — 17 21 m ID = 10 A Note6, V GS = 10 V Static drain to source on state resistance RDS(on) — 24 34 m ID = 10 A Note6, V GS = 4.5 V Input capacitance Ciss — 630 — pF Output capacitance Coss — 255 — pF Reverse transfer capacitance Crss — 185 — pF VDS = 10V, VGS = 0, f = 1 MHz Total gate charge Qg — 16 — nC Gate to source charge Qgs — 2 — nC Gate to drain charge Qgd — 6 — nC VDD = 25 V, VGS = 10 V, ID = 20 A Turn-on delay time td(on) — 9 — ns Rise time tr — 14 — ns Turn-off delay time td(off) — 33 — ns Fall time tf — 14 — ns VGS = 10 V, ID = 10 A, VDD 30 V,RL = 3 , RG = 4.7 Body-drain diode forward voltage VDF — 0.95 1.25 V IF = 20 A, VGS = 0 Note6 Body-drain diode reverse recovery time trr — 40 — ns IF = 20 A, VGS = 0 diF/dt = 100 A/s Note: 5. Pulse test MOS4, MOS5, MOS6 (P Channel) (Ta = 25 C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage drain current IDSS — — –10 A VDS = –40 V, VGS = 0 Gate to source leak current IGSS — — 10 A VGS = 20 V, VDS = 0 Gate to source cutoff voltage VGS(off) –1.0 — –2.5 V VDS = –10 V, ID = –1 mA Static drain to source on state resistance RDS(on) — 34 42 m ID = –10 A Note7, V GS = –10 V Static drain to source on state resistance RDS(on) — 48 68 m ID = –10 A Note7, V GS = –4.5 V Input capacitance Ciss — 920 — pF Output capacitance Coss — 360 — pF Reverse transfer capacitance Crss — 260 — pF VDS = –10 V, VGS = 0, f = 1 MHz Total gate charge Qg — 22 — nC Gate to source charge Qgs — 3 — nC Gate to drain charge Qgd — 8 — nC VDD = –25 V, VGS = –10 V, ID = –20 A Turn-on delay time td(on) — 19 — ns Rise time tr — 32 — ns Turn-off delay time td(off) — 32 — ns Fall time tf — 14 — ns VGS = –10 V, ID= –10 A, VDD –30 V, RL = 3 , RG = 4.7 Body-drain diode forward voltage VDF — –0.98 –1.27 V IF = –20 A, VGS = 0 Note7 Body-drain diode reverse recovery time trr — 45 — ns IF = –20 A, VGS = 0 diF/dt = 100 A/s Note: 7. Pulse test |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
