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MCP79400 Datasheet(PDF) 19 Page - Microchip Technology |
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MCP79400 Datasheet(HTML) 19 Page - Microchip Technology |
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19 / 42 page ![]() 2011 Microchip Technology Inc. DS25009C-page 19 MCP7940X 6.0 ON BOARD MEMORY The MCP7940X has both on-board Unique ID memory and battery-backed SRAM. The SRAM is arranged as 64 x 8 bytes and is retained when the VCC supply is removed, provided the VBAT supply is present and enabled. The Unique ID is nonvolatile memory and does not require the VBAT supply for retention. 6.1 SRAM FIGURE 6-1: SRAM/RTCC BYTE WRITE FIGURE 6-2: SRAM/RTCC MULTIPLE BYTE WRITE The 64 bytes of user SRAM are at location 0x20h and can be accessed during an RTCC update. Upon POR the SRAM will be in an undefined state. Writing to the SRAM and RTCC is accomplished in a similar way to writing to the EEPROM (as described later in this document) with the following consider- ations: • There is no page. The entire 64 bytes of SRAM or 32 bytes of RTCC register can be written in one command. • The SRAM allows an unlimited number of read/ write cycles with no cell wear out. • The RTCC and SRAM are not accessible when the device is running on the external VBAT. • The RTCC and SRAM are separate blocks. The SRAM array may be accessed during an RTCC update. • Read and write access is limited to either the RTCC register block or the SRAM array. The Address Pointer will rollover to the start of the addressed block. • Data written to the RTCC and SRAM are on a per byte basis. BUS ACTIVITY MASTER SDA LINE BUS ACTIVITY S T A R T CONTROL BYTE ADDRESS BYTE DATA S T O P A C K A C K A C K S 110 1 0 1 11 P x BUS ACTIVITY MASTER SDA LINE BUS ACTIVITY S T A R T CONTROL BYTE ADDRESS BYTE DATA BYTE 0 S T O P A C K A C K A C K DATA BYTE N A C K S 1 101 0 111 P x Note: Entering an address past 5F for an SRAM operation will result in the MCP7940X not acknowledging the address. |
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