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RJF0611DPD Datasheet(PDF) 3 Page - Renesas Technology Corp |
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RJF0611DPD Datasheet(HTML) 3 Page - Renesas Technology Corp |
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3 / 8 page ![]() RJF0611DPD Target Specifications R07DS0716EJ0100 Rev.1.00 Page 3 of 7 Apr 17, 2012 Main Characteristics 50 40 30 20 10 0 0 50 100 150 200 100 10 1 0.1 0.01 0.1 1 10 100 50 40 30 20 10 0 2 04 6 8 10 VGS = 3 V 0 0 12 3 4 5 30 20 10 9 V 8 V 7 V 4 V VDS = 10 V Pulse Test Pulse Test 800 400 500 600 700 300 200 100 0 2 04 6 8 10 1000 0.1 1 10 100 100 10 1 10 A ID = 15 A 5 A Pulse Test Tc = –40 °C 25 °C Pulse Test VGS = 4 V 10 V DC Operation (Tc = 25 °C) PW = 10 ms 1 ms 10 V Case Temperature Tc ( °C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Maximum Safe Operation Area Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Transfer Characteristics Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current Operation in this area is limited by R DS (on) Thermal shut down Operation area |
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