L6206Q datasheet(9/27 Pages) STMICROELECTRONICS

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L6206Q

Circuit description

4.1

Power stages and charge pump

The L6206Q device integrates two independent Power MOS full bridges. Each power MOS

has an RDS(ON) = 0.3  (typical value at 25 °C) with intrinsic fast freewheeling diode. Cross

conduction protection is implemented by using a deadtime (tDT = 1 µs typical value) set by

an internal timing circuit between the turn-off and turn-on of two Power MOSFETs in one leg

of a bridge.

Pins VSA and VSB must be connected together to the supply voltage (VS).

Using an N-channel Power MOSFET for the upper transistors in the bridge requires a gate

drive voltage above the power supply voltage. The bootstrapped supply (VBOOT) is obtained

through an internal oscillator and few external components to realize a charge pump circuit,

as shown in Figure 5. The oscillator output (pin VCP) is a square wave at 600 kHz (typically)

with 10 V amplitude. Recommended values/part numbers for the charge pump circuit are

shown in Table 5.

Figure 5. Charge pump circuit

4.2

Logic inputs

Pins IN1A, IN2A, IN1B, IN2B, ENA, and ENB are TTL/CMOS and µC compatible logic inputs.

The internal structure is shown in Figure 6. The typical values for turn-on and turn-off

thresholds are respectively Vth(ON) = 1.8 V and Vth(OFF) = 1.3 V.

Pins ENA and ENB are commonly used to implement overcurrent and thermal protection by

connecting them respectively to the outputs OCDA and OCDB, which are open-drain

outputs. If this type of connection is chosen, particular care needs to be taken in driving

these pins. Two configurations are shown in Figure 7 and Figure 8. If driven by an open-

drain (collector) structure, a pull-up resistor REN and a capacitor CEN are connected as

Table 5. Charge pump external component values

Component

Value

CBOOT

220 nF

10 nF

100



1N4148

AM02559v1

CBOOT

VSA

VCP

VBOOT

VSB

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