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BS08D-T112 Datasheet(PDF) 2 Page - Powerex Power Semiconductors |
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BS08D-T112 Datasheet(HTML) 2 Page - Powerex Power Semiconductors |
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2 / 4 page ![]() Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 BS08D-T112 Silicon Bilateral Switch 2/11 Rev. 1 Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol BS08D-T112 Units DC Forward Anode Current IT 175 mA Repetitive Peak Forward Current — 1.0 Amperes (1% Duty Cycle, 10 µs Pulsewidth), Ta = 100°C Non-repetitive Peak Forward Current (10 µs Pulsewidth) — 2.0 Amperes Power Dissipation PT 450 mW DC Gate Current IG 5 mA Storage Temperature Tstg -55 to 125 °C Operating Temperature Tj -55 to 125 °C Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Switching Voltage VS Ta = 25°C 7 8 9 Volts Switching Current IS Ta = 25°C — — 200 µA Absolute Switching Voltage Difference |VS1 -VS2| Ta = 25°C — — 0.5 Volts Absolute Switching Current Difference |IS1 -IS2| Ta = 25°C — — 100 µA Holding Current IH Ta = 25°C — — 1.5 mA Off-state Current ID VD = 5V, Ta = 25°C — — 1.0 µA VD = 5V, Ta = 85°C — — 10 µA Temperature Coefficient of Switching Voltage — Ta = -55 to 85°C — ±0.01 — %/°C Peak On-state Voltage VT IT = 175mA, Ta = 25°C — — 1.4 Volts Gate Trigger Current IGT VD = 5V, Ta = 25°C 10 — 200 µA Gate Non-trigger Voltage VGD VD = 5V, Ta = 85°C 0.2 — — Volts |
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