FCX458TA datasheet(1/2 Pages) DIODES

Part #	FCX458TA

Description	SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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SOT89 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 3 – OCTOBER 1995

FEATURES

*

400 Volt V

CEO

*P

tot= 1 Watt

COMPLEMENTARY TYPE –

FCX558

PARTMARKING DETAIL –

N58

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

400

V

Collector-Emitter Voltage

VCEO

400

V

Emitter-Base Voltage

VEBO

5V

Continuous Collector Current

IC

225

mA

Peak Pulse Current

ICM

500

mA

Power Dissipation at Tamb=25°C

Ptot

1W

Operating and Storage Temperature Range

Tj:Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Breakdown Voltages

V(BR)CBO

400

V

IC=100µA

VCEO(sus)

400

V

IC=10mA*

V(BR)EBO

5V

IE=100µA

Collector Cut-Off Currents

ICBO

100

nA

VCB=320V

ICES

100

nA

VCE=320V

Emitter Cut-Off Current

IEBO

100

nA

VEB=4V

Emitter Saturation Voltages

VCE(sat)

0.2

0.5

V

IC=20mA, IB=2mA*

IC=50mA, IB=6mA*

VBE(sat)

0.9

V

IC=50mA, IB=5mA*

Base-Emitter

Turn On Voltage

VBE(on)

0.9

V

IC=50mA, VCE=10V*

Static Forward Current

Transfer Ratio

hFE

100

15

300

IC=1mA, VCE=10V

IC=50mA, VCE=10V*

IC=100mA, VCE=10V**

Transition Frequency

fT

50

MHz

IC=10mA, VCE=20V

f=20MHz

Collector-Base

Breakdown Voltage

Cobo

5pF

VCB=20V, f=1MHz

Switching times

ton

toff

135 Typical

2260 Typical

ns

IC=50mA, VC=100V

IB1=5mA, IB2=-10mA

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤ 2%

Spice parameter data is available upon request for this device

For typical characteristics graphs see FMMT458 datasheet

FCX458

3 - 85

C

B

C

E

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