BLF178XR_BLF178XRS

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Product data sheet

Rev. 4 — 12 July 2013

3 of 14

NXP Semiconductors

BLF178XR; BLF178XRS

Power LDMOS transistor

5.

Thermal characteristics

[1]

[2]

Rth(j-c) is measured under RF conditions.

[3]

See Figure 1.

Table 5.

Thermal characteristics

Symbol Parameter

Conditions

Typ

Unit

thermal resistance from junction to case

[1][2] 0.11

K/W

transient thermal impedance from junction

to case

 =20%

[3] 0.033 K/W

(1)

 = 1 %

(2)

 = 2 %

(3)

 = 5 %

(4)

 = 10 %

(5)

 = 20 %

(6)

 = 50 %

(7)

 = 100 % (DC)

Fig 1.

Transient thermal impedance from junction to case as a function of pulse

duration