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AVT-52663 Datasheet(PDF) 2 Page - AVAGO TECHNOLOGIES LIMITED |
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AVT-52663 Datasheet(HTML) 2 Page - AVAGO TECHNOLOGIES LIMITED |
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2 / 13 page ![]() 2 Absolute Maximum Rating[1] TA=25°C Symbol Parameter Units Absolute Max. Id Device Current mA 90 PIN,MAX CW RF Input Power dBm 18 PDISS Total Power Dissipation [3] mW 394 TOPT Operating Temperature °C -40 to 85 TJ,MAX Junction Temperature °C 150 TSTG Storage Temperature °C -65 to 150 Thermal Resistance Thermal Resistance [2] TJC = 149°C/W (Id = 45 mA, TC = 85°C) Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Thermal resistance measured using Infrared measurement technique. 3. Ground lead temperature is 25°C. Derate 6.7mW/°C for TC >91°C. Electrical Specifications [4] TA = 25°C, Zo = 50 :, VCC = 5 V, Rbias = 22 :, Pin = -15 dBm (unless specified otherwise) Symbol Parameter and Test Condition Frequency Units Min. Typ. Max. Id Device Current mA 42 45.6 49 Gp Power Gain 900 MHz 2000 MHz dB 13.8 16.1 15.5 16.8 'Gp Gain Flatness 0.05 - 2 GHz 0.67 f3dB 3 dB Bandwidth GHz 5 OIP3 [5] Output 3rd Intercept Point 900 MHz 2000 MHz dBm 26.2 30.2 27.7 S11 Input Return Loss, 50 : source 900 MHz 2000 MHz dB -21.9 -15.9 S22 Output Return Loss, 50 : load 900MHz 2000 MHz dB -19.1 -15.2 S12 Reverse Isolation 900 MHz 2000 MHz dB -19.3 -19.8 P1dB Output Power at 1dB Gain Compression 900 MHz 2000 MHz dBm 15.6 15 NF Noise Figure 900 MHz 2000 MHz dB 3.6 4 Notes: 4. Measurements obtained on CPWG line with reference plane at the ends of DUT leads (as shown in Figure 1). 5. OIP3 test condition: FRF1 - FRF2 = 10MHz with input power of -15 dBm per tone measured at worse side band. Figure 1. Block diagram of board used for Id, Gain, OIP3, S11, S22, S12, OP1dB and NF measurements. Circuit losses have been de-embedded from actual measurements. Pin 1, 2, 4, 5 (GND) Pin 6 Pin 3 RFin RFout VCC Zo = 50 Ohm Zo = 50 Ohm Bias Tee Rbias |
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