RLT830-150GS datasheet(1/1 Pages) ROITHNER

Part #	RLT830-150GS

Description	High Power Infrared Laser Diode

PDF	1 Pages

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Manufacturer	ROITHNER [Roithner LaserTechnik GmbH]

Direct Link	http://www.roithner-laser.com

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ROITHNER LASERTECHNIK

SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA

TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44

office@roithner-laser.com

www.roithner-laser.com

RLT830-150GS TECHNICAL DATA

High Power Infrared Laser Diode

Lasing mode structure: single mode

Lasing wavelength: typ. 830 nm

Optical power: 150 mW

Package: 9 mm (SOT-148)

PIN CONNECTION:

1) Laser diode anode

2) Laser diode cathode and photodiode cathode

3) Photodiode anode

Absolute Maximum Ratings (Tc = 25°C)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Optical Output Power

Po

160

mW

LD Reverse Voltage

VR(LD)

1.5

V

PD Reverse Voltage

VR(PD)

10

V

Operating Temperature

TC

-20 .. +40

°C

Storage Temperature

TSTG

-40 .. +70

°C

Optical-Electrical Characteristics (Tc = 25°C)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Emitting Aperture

A

cw

1 x 5

µm²

Optical Output Power

Po

single mode

150

mW

Threshold Current

Ith

cw

40

50

60

mA

Operation Current

Iop

Po = 150 mW

180

190

200

mA

Forward Voltage

Uf

Po = 150 mW

1.8

1.9

2.0

V

Lasing Wavelength

λ

p

Po = 150 mW

825

830

835

nm

Spectral Width FWHM

∆λ

Po = 150 mW

0.2

0.3

nm

Beam Divergence

θ

//

Po = 150 mW

25

°

Beam Divergence

θ⊥

Po = 150 mW

40

°

Monitor Current

Im

Po = 150 mW

100

500

1500

µA

NOTE!

LASERDIODE

MUST BE COOLED!

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RLT830-150GS Datasheet(PDF) 1 Page - Roithner LaserTechnik GmbH

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