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HIT647 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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HIT647 Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 5 page ![]() HIT647 Preliminary R07DS0449EJ0400 Rev.4.00 Page 2 of 4 Jun 14, 2011 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –120 — — V IC = –100 A, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –100 — — V IC = –10 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –6 — — V IE = –100 A, IC = 0 Collector cutoff current ICBO — — –500 nA VCB = –120 V, IE = 0 Emitter cutoff current IEBO — — –500 nA VEB = –6 V, IC = 0 DC current transfer ratio hFE1 140 — 350 — VCE = –2 V, IC = –150 mA hFE2 40 — — — VCE = –5 V, IC = –1 A Collector to emitter saturation voltage VCE(sat) — — –0.5 V IC = –500 mA, IB = –50 mA Base to emitter saturation voltage VBE(sat) — — –1.1 V IC = –500 mA, IB = –50 mA |
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