BTA10-600GPRG datasheet(2/7 Pages) STMICROELECTRONICS

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Characteristics

BTA10-600GP

2/7

Doc ID 022222 Rev 1

Characteristics

Table 1.

Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

VDRM

VRRM

Repetitive peak off-state voltage Tj = 125° C

600

IT(RMS)

RMS on-state current (360° conduction angle)

Tc = 90° C

ITSM

Non repetitive surge peak on-state current

(Tj initial = 25° C)

tp = 8.3 ms

126

tp = 10 ms

120

I2tI²t Value for fusing

tp = 10 ms

A2s

dI/dt

Critical rate of rise of on-state current

IG = 500 mA diG/dt = 1 A/µs

Repetitive

F = 50 Hz

A/µs

Non repetitive

Tstg

Storage junction temperature range

Operating junction temperature range

-40 to +150

-40 to +125

° C

Table 2.

Electrical characteristics

Symbol

Test conditions

Quadrant

Value

Unit

IGT

(1)

VD = 12 V (DC)

RL = 33 Ω

Tj = 25° C

I - II- III

MAX

100

VGT

VD = 12 V (DC)

RL = 33 Ω

Tj = 25° C

I - II - III - IV

MAX

1.5

VGD

VD = VDRM RL = 3.3 kΩ

Tj = 110° C

I - II - III - IV

MIN

0.2

tgt

VD = VDRM IG = 500 mA dIG/dt = 3 A/µs Tj = 25° C

I - II - III - IV

TYP

µs

IG = 1.2 IGT

Tj = 25° C

I - II - III

TYP

(1)

IT = 100 mA gate open

Tj = 25° C

MAX

VTM

(1)

ITM = 14 A tp = 380 µs

Tj = 25° C

MAX

1.5

IDRM

IRRM

VDRM = VRRM

Tj = 25° C

MAX

0.01

Tj = 110° C

MAX

0.5

dV/dt (1)

Linear slope up to VD = 67% VDRM

gate open

Tj = 110° C

MIN

V/µs

TYP

100

(dV/dt)c (1) (dI/dt)c = 2.2 A/ms

Tj = 110° C

MIN

V/µs

TYP

For either polarity of electrode A2 voltage with reference to electrode A1.

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