2SC5455 datasheet(3/14 Pages) RENESAS

3 / 14 page

1998

PRELIMINARY DATA SHEET

FEATURE

•

Ideal for medium-output applications

•

High gain, low noise

•

Small reverse transfer capacitance

•

Can operate at low voltage

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

PARAMETER

SYMBOL

RATING

UNIT

Collector to Base Voltage

VCBO

Collector to Emitter Voltage

VCEO

Emitter to Base Voltage

VEBO

Collector Current

100

Total Power Dissipation

200

Junction Temperature

150

°C

Storage Temperature

Tstg

–65 to +150

°C

SILICON TRANSISTOR

2SC5455

NPN EPITAXIAL SILICON TRANSISTOR

4-PIN MINI MOLD

Document No. P13081EJ1V0DS00 (1st edition)

Date Published February 1998 N CP(K)

Printed in Japan

PACKAGE DIMENSIONS (in mm)

5°

2.8

+0.2

–0.3

1.5

+0.2

–0.1

PIN CONNECTIONS

1: Collector

2: Emitter

3: Base

4: Emitter

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0

0.1

µA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0

0.1

µA

DC Current Gain

hFE

VCE = 3 V, IC = 30 mANote 1

150

Gain Bandwidth Product

VCE = 3 V, IC = 30 mA, f = 2 GHz

12.0

GHz

Reverse Transfer Capacitance

Cre

VCB = 3 V, IE = 0, f = 1 MHzNote 2

0.5

0.7

Insertion Power Gain

|S21e|2

VCE = 3 V, IC = 30 mA, f = 2 GHz

8.0

10.0

Noise Figure

VCE = 3 V, IC = 7 mA, f = 2 GHz

1.5

2.5

Notes 1. Pulse measurement PW

≤ 350

µs, duty cycle ≤ 2 %

2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when

emitter pin is connected to the guard pin.

Because this product uses high-frequency process, avoid excessive input of static electricity, etc.

The information in this document is subject to change without notice.

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