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TPS2012DR Datasheet(PDF) 14 Page - Texas Instruments

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Part # TPS2012DR
Description  POWER-DISTRIBUTION
PDF  21 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TPS2012DR Datasheet(HTML) 14 Page - Texas Instruments

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TPS2010, TPS2011, TPS2012, TPS2013
POWER-DISTRIBUTION
SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995
14
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 27
3.5
3
2
1.5
2.5
3
3.5
4
4
5
THRESHOLD TRIP CURRENT
vs
INPUT VOLTAGE
5.5
4.5
5
5.5
4.5
2.5
TPS2010
TPS2013
TPS2012
TPS2011
VI – Input Voltage – V
Figure 28
1.5
1
0.5
0
2
2.5
SHORT-CIRCUIT CURRENT
vs
JUNCTION TEMPERATURE
3
– 50
– 25
0
25
50
75
100
125
TJ – Junction Temperature – °C
TPS2013
TPS2012
TPS2011
TPS2010
VI(IN) = 5.5 V
APPLICATION INFORMATION
0.1
µF
External Load
+
0.1
µF
1
µF
Power Supply
2.7 V – 5.5 V
Load Enable
IN
IN
EN
OUT
OUT
OUT
OUT
GND
TPS2010D
2
3
4
5
6
7
8
1
Figure 29. Typical Application
power supply considerations
The TPS201x family has multiple inputs and outputs, which must be connected in parallel to minimize voltage
drop and prevent unnecessary power dissipation.
A 0.047-
µF to 0.1-µF ceramic bypass capacitor between IN and GND, close to the device, is recommended.
A high-value electrolytic capacitor is also desirable when the output load is heavy or has large paralleled
capacitors. Bypassing the output with a 0.1-
µF ceramic capacitor improves the immunity of the device to
electrostatic discharge (ESD).



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