CSD15571Q2 datasheet(2/10 Pages) TI

2 / 10 page

CSD15571Q2

SLPS435 – AUGUST 2013

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ELECTRICAL CHARACTERISTICS

TA = 25°C, unless otherwise specified

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Static Characteristics

BVDSS

Drain to Source Voltage

VGS = 0V, ID = 250μA

IDSS

Drain to Source Leakage Current

VGS = 0V, VDS = 20V

μA

IGSS

Gate to Source Leakage Current

VDS = 0V, VGS = 20V

100

VGS(th)

Gate to Source Threshold Voltage

VDS = VGS, IDS = 250μA

1.10

1.45

1.90

VGS = 4.5V, IDS = 5A

16.0

19.2

Ω

RDS(on)

Drain to Source On Resistance

VGS = 10V, IDS = 5A

12.0

15.0

Ω

gfs

Transconductance

VDS = 16V, IDS = 5A

Dynamic Characteristics

CISS

Input Capacitance

320

419

COSS

Output Capacitance

VGS = 0V, VDS = 10V, f = 1MHz

184

239

CRSS

Reverse Transfer Capacitance

Series Gate Resistance

3.8

7.6

Ω

Gate Charge Total (4.5V)

2.5

3.3

Gate Charge Total (10V)

5.1

6.7

Qgd

Gate Charge – Gate to Drain

VDS = 10V, IDS = 5A

0.66

Qgs

Gate Charge Gate to Source

0.93

Qg(th)

Gate Charge at Vth

0.52

QOSS

Output Charge

VDS = 10V, VGS = 0V

4.1

td(on)

Turn On Delay Time

4.7

Rise Time

17.2

VDS = 10V, VGS = 4.5V, IDS = 5A

RG = 2Ω

td(off)

Turn Off Delay Time

9.9

Fall Time

4.1

Diode Characteristics

VSD

Diode Forward Voltage

IDS = 5A, VGS = 0V

0.82

Qrr

Reverse Recovery Charge

10.7

VDD = 10V, IF = 5A, di/dt = 300A/μs

trr

Reverse Recovery Time

THERMAL CHARACTERISTICS

(TA = 25°C unless otherwise stated)

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Thermal Resistance Junction to Case(1)

4.5

°C/W

RθJA

Thermal Resistance Junction to Ambient(1)(2)

°C/W

(1)

RθJC is determined with the device mounted on a 1-inch

2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×

3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.

(2)

Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.

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