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QID3320002 Datasheet(PDF) 5 Page - Powerex Power Semiconductors

Part # QID3320002
Description  Dual IGBT HVIGBT Module 200 Amperes/3300 Volts
PDF  6 Pages
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Manufacturer  POWEREX [Powerex Power Semiconductors]
Direct Link  http://www.pwrx.com
Logo POWEREX - Powerex Power Semiconductors

QID3320002 Datasheet(HTML) 5 Page - Powerex Power Semiconductors

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QID3320002
Dual IGBT HVIGBT Module
200 Amperes/3300 Volts
5
01/13 Rev. 8
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
COLLECTOR-EMITTER VOLTAGE, V
CE, (VOLTS)
CAPACITANCE VS. VCE
(TYPICAL)
100
102
100
10
1.0
0.1
101
VGE = 0V
Tj = 25°C
f = 100 kHz
Cies
Coes
Cres
0
100
50
150 200 250 300 350
10-1
GATE CHARGE, Q
G, (C)
GATE CHARGE VS. VGE
20
0
5
10
15
0
-5
-10
-15
0.5
2.0
1.5
1.0
VCE = 1800V
IC = 170A
Tj = 25°C
COLLECTOR CURRENT, I
C, (AMPERES)
1100
1000
800
900
100
200
300
400
500
600
700
0
VCC = 1800V
VGE = +15V/-8V
RG(on) = 15Ω
RG(off) = 50Ω
Ls = 100nH
Tj = 150°C
Inductive Load
HALF-BRIDGE
SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
Eon
Eoff
Erec
0
100
50
150 200 250 300 350
COLLECTOR CURRENT, I
C, (AMPERES)
1000
800
900
100
200
300
400
500
600
700
0
VCC = 1800V
VGE = +15V/-8V
RG(on) = 15Ω
RG(off) = 50Ω
Ls = 100nH
Tj = 125°C
Inductive Load
SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
Erec
Eon
Eoff



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