RoHS Device

QW-BTR39

Page 1

REV: A

Dimensions in inches and (millimeter)

Symbol

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

SOT-23

1

Base

2

Emitter

Collector

3

Conditions

f=30MHz

-300

-300

-5

100

50

-0.25

-0.1

200

-0.2

-0.9

Min

Max

V

V

V

μA

μA

V

V

MHz

General Purpose Transistor

Features

-High voltage transistor.

Diagram:

Symbol

Parameter

Value

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current-Continuous

Collector power dissipation

Junction temperature

-300

-300

-5

-200

300

150

V

V

V

mA

mW

°C

Collector current-pulsed

-500

mA

Thermal resistance, junction to ambient

RΘJA

410

°C/W

-55 to +150

°C

Storage temperature

DC current gain

60

60

3

1

2

0.119(3.00)

0.110(2.80)

0.056(1.40)

0.047(1.20)

0.079(2.00)

0.071(1.80)

0.041(1.05)

0.035(0.90)

0.020(0.50)

0.012(0.30)

0.006(0.15)

0.003(0.08)

0.100(2.550)

0.089(2.250)

0.004(0.10) max

0.012(0.30)

0.020(0.50)

Parameter

Comchip Technology CO., LTD.

Company reserves the right to improve product design , functions and reliability without notice.