IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

6,404,065B1

6,162,665

6,534,343

6,583,505

of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

6,259,123B1 6,306,728B1 6,683,344

IXGR 50N60C2

IXGR 50N60C2D1

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

C

= 40 A; V

40

51

S

Note 1

C

ies

3700

pF

C

oes

V

290

pF

C

res

50

pF

Q

g

138

nC

Q

ge

I

25

nC

Q

gc

40

nC

t

d(on)

18

n s

t

ri

25

n s

t

d(off)

115

150

n s

t

fi

48

n s

E

off

0.38

0.7

mJ

t

d(on)

18

n s

t

ri

25

n s

E

on

1.4

mJ

t

d(off)

170

n s

t

fi

60

n s

E

off

0.74

mJ

R

thJC

0.62 K/W

R

thCK

0.15

K/W

Inductive load, T

°°°°C

I

V

Inductive load, T

°°°°C

I

V

Reverse Diode (FRED)

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

V

F

I

2.1

V

Note 1

T

1.4

I

RM

I

8.3

A

V

t

rr

I

35

n s

R

thJC

0.85 K/W

Note 1: Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

ISOPLUS 247 Outline