RN4985

2007-11-01

1

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)

RN4985

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Including two devices in US6 (ultra super mini type with 6 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Equivalent Circuit and Bias Resister Values

R1: 2.2kΩ

R2: 47kΩ

(Q1, Q2 Common)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

50

V

Emitter-base voltage

5

V

Collector current

100

mA

Characteristic

Symbol

Rating

Unit

Collector-base voltage

−50

V

Collector-emitter voltage

−50

V

Emitter-base voltage

−5

V

Collector current

−100

mA

JEDEC

―

JEITA

―

TOSHIBA

2-2J1A

Weight: 6.8 mg (typ.)

Unit: mm