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2SC5108 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SC5108 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page ![]() 2SC5108 2010-02-17 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 10 V, IE = 0 ⎯ ⎯ 1 μA Emitter cut-off current IEBO VEB = 1 V, IC = 0 ⎯ ⎯ 1 μA DC current gain hFE (Note 1) VCE = 5 V, IC = 5 mA 80 ⎯ 240 Transition frequency fT VCE = 5 V, IC = 5 mA 4 6 ⎯ GHz Insertion gain ⎪S21e⎪ 2 VCE = 5 V, IC = 5 mA, f = 1 GHz 7 11 ⎯ dB Output capacitance Cob ⎯ 0.7 ⎯ pF Reverse transfer capacitance Cre VCB = 5 V, IE = 0, f = 1 MHz (Note 2) ⎯ 0.5 0.9 pF Collector-base time constant Cc・rbb’ VCB = 5 V, IC = 3 mA, f = 30 MHz ⎯ 5.5 15 ps Note 1: hFE classification O: 80 to 160, Y: 120 to 240 Note 2: Cre is measured by 3 terminal method with capacitance bridge. Marking |
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