GT40WR21 datasheet(3/5 Pages) TOSHIBA

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GT40WR21

6. Electrical Characteristics

Electrical Characteristics

6.1.

6.1. Static Characteristics (T

Static Characteristics (T

Static Characteristics (Taaaa = 25

= 25

= 25



, unless otherwise specified)

, unless otherwise specified)

Characteristics

Gate leakage current

Collector cut-off current

Gate-emitter cut-off voltage

Collector-emitter saturation voltage

Diode forward voltage

Symbol

IGES

ICES

VGE(OFF)

VCE(sat)

Test Condition

VGE = ±25 V, VCE = 0 V

VCE = 1800 V, VGE = 0 V

IC = 40 mA, VCE = 5 V

IC = 40 A, VGE = 15 V

IF = 15 A, VGE = 0 V

Min



4.5



Typ.



2.9

1.7

Max

±100

7.5

5.9

2.7

Unit

6.2.

6.2. Dynamic Characteristics (T

Dynamic Characteristics (T

Dynamic Characteristics (Taaaa = 25

= 25

= 25



, unless otherwise specified)

, unless otherwise specified)

Characteristics

Input capacitance

Switching time (rise time)

Switching time (turn-on time)

Switching time (fall time)

Switching time (turn-off time)

Reverse recovery time

Symbol

Cies

ton

toff

trr

Test Condition

VCE = 10 V, VGE = 0 V,

f = 1 MHz

Resistive load

VCC = 600 V, IC = 40 A,

VGG = ±15 V, RG = 51 Ω

See Fig. 6.2.1, 6.2.2.

IF = 15 A, VGE = 0 V,

di/dt = -20 A/µs

Min



Typ.

4500

0.40

0.55

0.15

0.42

1.0

Max



0.35



Unit

µs

Fig.

Fig. 6.2.1

6.2.1

6.2.1 Test Circuit of Switching Time

Test Circuit of Switching Time

Fig.

Fig. 6.2.2

6.2.2

6.2.2 Timing Chart of Switching Time

Timing Chart of Switching Time

7. Marking (Note)

Marking (Note)

Fig.

Fig. 7.1

7.1

7.1 Marking

Marking

Note:

A line under a Lot No. identifies the indication of product Labels.

[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product.

The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on

the restriction of the use of certain hazardous substances in electrical and electronic equipment.

Note:

This transistor is sensitive to electrostatic discharge and should be handled with care.

2012-06-05

Rev.1.0

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