HN1C01F

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

HN1C01F

Audio-Frequency General-Purpose Amplifier Applications

Small package (dual type)

High voltage and high current

(Q1, Q2 Common)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

60

V

Collector-emitter voltage

50

V

Emitter-base voltage

5

V

Collector current

150

mA

Base current

30

mA

Collector power dissipation

300

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* Total rating

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

―

―

―

0.1

μA

Emitter cut-off current

―

―

―

0.1

μA

DC current gain

―

120

―

400

Collector-emitter

saturation voltage

―

―

0.1

0.25

V

Transition frequency

―

80

―

―

MHz

Collector output capacitance

―

―

2

3.5

pF

Y (Y): 120~240, GR (G): 200~400

( ) Marking symbol

JEDEC

―

JEITA

―

TOSHIBA

2-3N1A

Weight: 0.015 g (typ.)

Unit: mm