IPLU300N04S4-R7 datasheet(1/9 Pages) INFINEON

Part #	IPLU300N04S4-R7

Description	OptiMOS-T2 Power-Transistor

PDF	9 Pages

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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IPLU300N04S4-R7

OptiMOS

™-T2 Power-Transistor

Features

• N-channel - Enhancement mode

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant); 100% lead free

• Ultra low Rds(on)

• 100% Avalanche tested

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Unit

Continuous drain current

I D

T C=25°C, V GS=10V

1)

300

A

T C=100 °C,

V GS=10 V

2)

300

Pulsed drain current

2)

I D,pulse

T C=25 °C

1200

Avalanche energy, single pulse

2)

E AS

I D=150 A

750

mJ

Avalanche current, single pulse

I AS

-

300

A

Gate source voltage

V GS

-

±20

V

Power dissipation

P tot

T C=25 °C

429

W

Operating and storage temperature

T j, T stg

-

-55 ... +175

°C

IEC climatic category; DIN IEC 68-1

-

55/175/56

Value

V

DS

40

V

R

DS(on)

0.76

m

W

I

D

300

A

Product Summary

Type

Package

Marking

IPLU300N04S4-R7

H-PSOF-8-1

4N04R7

Gate

pin 1

Drain

Tab

Source

pin 2 - 8

H-PSOF-8-1

8

1

8

Tab

Rev. 1.0

page 1

2013-11-12

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IPLU300N04S4-R7 Datasheet(PDF) 1 Page - Infineon Technologies AG

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