MTP2N40E

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

400

—

—

451

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 400 Vdc, VGS = 0 Vdc)

(VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

10

100

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

VGS(th)

2.0

—

3.2

7.0

4.0

—

Vdc

mV/

°C

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 1.0 Adc)

RDS(on)

—

3.1

3.5

Ohms

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 2.0 Adc)

(ID = 1.0 Adc, TJ = 125°C)

VDS(on)

—

—

7.3

—

8.4

7.4

Vdc

Forward Transconductance (VDS = 15 Vdc, ID = 1.0 Adc)

gFS

0.5

1.0

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

229

320

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

34

40

Reverse Transfer Capacitance

f = 1.0 MHz)

Crss

—

7.3

10

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

(VDD = 200 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

td(on)

—

8.0

16

ns

Rise Time

(VDD = 200 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

tr

—

8.4

14

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 9.1 Ω)

td(off)

—

12

26

Fall Time

G = 9.1 Ω)

tf

—

11

20

Gate Charge

(VDS = 320 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

QT

—

8.6

12

nC

(VDS = 320 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

Q1

—

2.6

—

(VDS = 320 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

Q2

—

3.2

—

Q3

—

5.0

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 2.0 Adc, VGS = 0 Vdc)

(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

0.88

0.76

1.2

—

Vdc

Reverse Recovery Time

(IS = 2.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

—

156

—

ns

(IS = 2.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

ta

—

99

—

(IS = 2.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

tb

—

57

—

Reverse Recovery Stored Charge

QRR

—

0.89

—

µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from contact screw on tab to center of die)

(Measured from the drain lead 0.25

″ from package to center of die)

LD

—

—

3.5

4.5

—

—

nH

Internal Source Inductance

(Measured from the source lead 0.25

″ from package to source bond pad)

LS

—

7.5

—

nH

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.