2SC5994

No.8035-2/7

Continued from preceding page.

Parameter

Symbol

Conditions

Ratings

Unit

Collector Dissipation

PC

1.3

W

Tc=25°C

3.5

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=50V, IE=0A

1

μA

Emitter Cutoff Current

IEBO

VEB=4V, IC=0A

1

μA

DC Current Gain

hFE1VCE=2V, IC=100mA

200

560

hFE2VCE=2V, IC=1.5A

40

Gain-Bandwidth Product

fT

VCE=10V, IC=300mA

420

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

9

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=1A, IB=50mA

135

300

mV

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=1A, IB=50mA

0.9

1.2

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=10μA, IE=0A

100

V

Collector-to-Emitter Breakdown Voltage

V(BR)CES

IC=100μA, RBE=0Ω

100

V

V(BR)CEO

IC=1mA, RBE=∞

50

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=10μA, IC=0A

6

V

Turn-ON Time

ton

See specified Test Circuit.

30

ns

Storage Time

tstg

330

ns

Fall Time

tf

40

ns

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

2SC5994-TD-E

PCP

1,000pcs./reel

Pb Free

VR

RB

VCC=25V

IC=10IB1= --10IB2=700mA

VBE= --5V

+

+

50Ω

INPUT

OUTPUT

RL

470μF

100μF

PW=20μs

IB1

D.C.≤1%

IB2

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.