2SB1123 / 2SD1623

No.1727-2/8

Continued from preceding page.

Parameter

Symbol

Conditions

Ratings

Unit

Collector Dissipation

PC

0.5

W

1.3

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=(--)50V, IE=0A

(--)100

nA

Emitter Cutoff Current

IEBO

VEB=(--)4V, IC=0A

(--)100

nA

DC Current Gain

hFE1VCE=(--)2V, IC=(--)100mA

100*

560*

hFE2VCE=(--)2V, IC=(--)1.5A

40

Gain-Bandwidth Product

fT

VCE=(--)10V, IC=(--)50mA

150

MHz

Output Capacitance

Cob

VCB=(--)10V, f=1MHz

(22)12

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=(--)1A, IB=(--)50mA

(--0.3)0.15

(--0.7)0.4

V

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=(--)1A, IB=(--)50mA

(--)0.9

(--)1.2

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=(--)10μA, IE=0A

(--)60

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=(--)1mA, RBE=∞

(--)50

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=(--)10μA, IC=0A

(--)6

V

Turn-ON Time

ton

See specified Test Circuit.

(60)60

ns

Storage Time

tstg

(450)550

ns

Fall Time

tf

(30)30

ns

* : The 2SB1123 / 2SD1623 are classified by 100mA hFE as follows :

Rank

R

S

T

U

hFE

100 to 200

140 to 280

200 to 400

280 to 560

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

2SB1123S-TD-E

PCP

1,000pcs./reel

Pb Free

2SB1123T-TD-E

PCP

1,000pcs./reel

2SD1623S-TD-E

PCP

1,000pcs./reel

2SD1623T-TD-E

PCP

1,000pcs./reel

VR

RB

25V

--5V

+

+

50Ω

INPUT

OUTPUT

RL=50Ω

100μF

470μF

PW=20μs

IC=10IB1= --10IB2=500mA

(For PNP, the polarity is reversed)

IB1

D.C.≤1%

IB2

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.