MTP3055VL datasheet(3/8 Pages) MOTOROLA

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MTP3055VL

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

2.0

3.0

4.0

5.0

6.0

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.02

0.14

0.26

0.32

0.07

0.12

0.17

0.22

0.27

ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus Drain Current

and Temperature

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

– 50

0.5

1.0

1.5

0.1

100

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

– 25

100

125

150

TJ = 25°C

VGS = 10 V

5 V

4.5 V

3 V

2.5 V

3.5 V

VGS = 5 V

TJ = 100°C

°C

– 55

°C

VDS ≥ 10 V

TJ = – 55°C

°C

100

°C

TJ = 25°C

VGS = 10 V

5 V

VGS = 0 V

TJ = 125°C

4 V

2.5

3.5

4.5

5.5

0.20

0.08

1.0

2.0

VGS = 5 V

ID = 6 A

100

°C

175

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